? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c; r gs = 1 m 150 v v gsm transient 30 v i d25 t c = 25 c56a i dm t c = 25 c, pulse width limited by t jm 140 a i ar t c = 25 c5a e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 p d t c = 25 c 300 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 200 a r ds(on) v gs = 10 v, i d = 28 a, notes 1, 2 36 m trenchhv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated IXTA56N15T ixtp56n15t v dss = 150 v i d25 =56 a r ds(on) 36 m ds99800 (03/07) to-263 (ixta) to-220 (ixtp) g s g d s g = gate d = drain s = source tab = drain (tab) (tab) features z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXTA56N15T ixtp56n15t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 28 a, note 1 23 39 s c iss 2250 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 330 pf c rss 50 pf t d(on) resistive switching times 16 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 28 a 17 n s t d(off) r g = 5 (external) 43 n s t f 18 ns q g(on) 34 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 10 nc q gd 11 nc r thjc 0.50 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 56 a i sm pulse width limited by t jm 160 a v sd i f =25 a, v gs = 0 v, note 1 1.1 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle, d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2007 ixys corporation, all rights reserved IXTA56N15T ixtp56n15t fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 15 30 45 60 75 90 105 120 135 150 0 2 4 6 8 10121416182022242628 v ds - volts i d - amperes v gs = 10v 9v 6v 7v 8v fig. 3. output characteristics @ 150oc 0 5 10 15 20 25 30 35 40 45 50 55 60 00.5 11.522.533.544.5 55.5 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 28a value vs. junction temperature 0.2 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 56a i d = 28a fig. 5. r ds(on) normalized to i d = 28a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 102030405060708090100110120130 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA56N15T ixtp56n15t fig. 7. input admittance 0 10 20 30 40 50 60 70 3.43.84.24.6 5 5.45.86.26.6 7 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.40.50.60.70.80.9 1 1.11.21.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v gs - volts v ds = 75v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved ixys ref: t_56n15t (4g) 12-07-06.xls IXTA56N15T ixtp56n15t fig. 14. resistive turn-on rise time vs. drain current 7 9 11 13 15 17 19 14 17 20 23 26 29 32 35 38 41 44 47 50 53 56 i d - amperes t r - nanoseconds r g = 5 v gs = 15v v ds = 75v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 8 9 10 11 12 13 14 15 16 17 18 5 6 7 8 9 1011121314151617181920 r g - ohms t r - nanoseconds 14 15 16 17 18 19 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 75v i d = 28a, 56a fig. 16. resistive turn-off switching times vs. junction temperature 12 13 14 15 16 17 18 19 20 21 22 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 34 36 38 40 42 44 46 48 50 52 54 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 , v gs = 15v v ds = 75v i d = 28a i d = 56a fig. 17. resistive turn-off switching times vs. drain current 12 13 14 15 16 17 18 19 20 21 22 14 17 20 23 26 29 32 35 38 41 44 47 50 53 56 i d - amperes t f - nanoseconds 34 36 38 40 42 44 46 48 50 52 54 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 15v v ds = 75v t j = 125oc t j = 125oc t j = 25oc fig. 18. resistive turn-off switching times vs. gate resistance 5 10 15 20 25 30 35 40 45 5 6 7 8 9 1011121314151617181920 r g - ohms t f - nanoseconds 30 40 50 60 70 80 90 100 110 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 75v i d = 28a, 56a fig. 13. resistive turn-on rise time vs. junction temperature 8 9 10 11 12 13 14 15 16 17 18 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 15v v ds = 75v i d = 28a i d = 56a
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